In order to fabricate a high performance thin film semiconductor device using a temperature process in which it is possible to use inexpensive glass substrates, a highly crystalline mixed-crystallinity semiconductor film is deposited by means of PECVD using a silane as the source gas and argon as the...http://www.google.fr/patents/US6391690?utm_source=gb-gplus-shareBrevet US6391690 - Thin film semiconductor device and method for producing the same
Thin film semiconductor device and method for producing the same
