Layered structures (e.g., Al-Si/Ti/Al-Si . . . ) and homogeneous alloys of aluminum and aluminum/1 at. % silicon with titanium and tungsten and other refractory metals have been found to significantly reduce hillock densities in the films when small amounts of titanium or tungsten are homogeneously added....http://www.google.fr/patents/USRE37032?utm_source=gb-gplus-shareBrevet USRE37032 - Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects
Layered and homogeneous films of aluminum and aluminum/silicon with titanium ...
