Methods of fabricating memory devices having non-volatile and volatile memory are provided. A substrate is provided, wherein the substrate has a non-volatile memory region and a volatile memory region. The non-volatile memory region has a storage device, such as a split-gate transistor, that is fabricated...http://www.google.fr/patents/US6902975?utm_source=gb-gplus-shareBrevet US6902975 - Non-volatile memory technology compatible with 1T-RAM process
Non-volatile memory technology compatible with 1T-RAM process
