A dielectric layer having atomic layer deposited zirconium aluminum oxide and a method of fabricating such a dielectric layer may produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The zirconium aluminum oxide may be formed in an atomic layer...http://www.google.fr/patents/US7625794?utm_source=gb-gplus-shareBrevet US7625794 - Methods of forming zirconium aluminum oxide
