The present invention provides an anti-reflective Si-Rich Silicon oxynitride (SiON) etch barrier layer and two compatible oxide etch processes. The Si-Rich Silicon oxynitride (SiON) etch barrier layer can be used as a hard mask in a dual damascene structure and as a hard mask for over a polysilicon gate....http://www.google.fr/patents/US6245669?utm_source=gb-gplus-shareBrevet US6245669 - High selectivity Si-rich SiON etch-stop layer
