A semiconductor device is made by forming a plurality of conductive pillars vertically over a temporary carrier. A conformal insulating layer is formed over the conductive pillars. A conformal conductive layer is formed over the conformal insulating layer. A first conductive pillar, conformal insulating...http://www.google.fr/patents/US20100230806?utm_source=gb-gplus-shareBrevet US20100230806 - Semiconductor Device and Method of Forming Three-Dimensional Vertically Oriented Integrated Capacitors
Semiconductor Device and Method of Forming Three-Dimensional Vertically ...
Numéro de demande: 12/404,134 Numéro de publication: US 2010/0230806 A1 Date de dépôt: 13 mars 2009 Brevet délivré: US7989270 ( Date de délivrance 2 août 2011)
