The starting structure consists of a silicon substrate having diffused regions formed therein and gate conductor stacks formed thereupon that is passivated by a TEOS layer as standard. At a further stage of the wafer fabrication process, contact holes exposing some diffused regions and top of gate conductor...http://www.google.fr/patents/US6258727?utm_source=gb-gplus-shareBrevet US6258727 - Method of forming metal lands at the M0 level with a non selective chemistry
Method of forming metal lands at the M0 level with a non selective chemistry
