A storage cell that may be a memory cell, and integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell is formed between a top an bottom electrode. Each cell includes a phase change layer that may be a chalcogenide and in particular a germanium...http://www.google.fr/patents/US7057923?utm_source=gb-gplus-shareBrevet US7057923 - Field emission phase change diode memory
