A pressure sensor and method of forming the pressure sensor are described. The pressure sensor is formed by etching a number of trenches in a silicon substrate. Dielectric spacers are formed on the sidewalls of the trenches. The bottoms of the trenches are then etched using isotropic etching to undercut...http://www.google.fr/patents/US6225140?utm_source=gb-gplus-shareBrevet US6225140 - CMOS compatable surface machined pressure sensor and method of fabricating the same
CMOS compatable surface machined pressure sensor and method of fabricating ...
