Disclosed is a method for manufacturing a semiconductor device, for example, an MOSFET. According to this method, an n-well region is formed in a predetermined portion of a p-type semiconductor substrate, after which a field oxide film is formed on that portion of the n-well region which is in contact...http://www.google.fr/patents/US4966866?utm_source=gb-gplus-shareBrevet US4966866 - Method for manufacturing semiconductor device having gate electrodes of different conductivity types
Method for manufacturing semiconductor device having gate electrodes of ...
