A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect for light in...http://www.google.fr/patents/US7253491?utm_source=gb-gplus-shareBrevet US7253491 - Silicon light-receiving device
