A multi-body thickness (MBT) field effect transistor (FET) comprises a silicon body formed on a substrate. The silicon body may comprise a wide section and a narrow section between the wide section and the substrate. The silicon body may comprise more than one pair of a wide section and a narrow section,...http://www.google.fr/patents/US7407847?utm_source=gb-gplus-shareBrevet US7407847 - Stacked multi-gate transistor design and method of fabrication
Stacked multi-gate transistor design and method of fabrication
