Memory device comprises a glass substrate (1), a layer of indium tin oxide (2), a layer of p type semiconductor (3), a layer of i type semiconductor (4), a layer of n type semiconductor (5) and a layer of spots of an electrically conducting material (6). Silicon is the preferred semiconductor. The device...http://www.google.fr/patents/US4567499?utm_source=gb-gplus-shareBrevet US4567499 - Memory device
