A nonvolatile semiconductor memory fabrication method including forming a first insulating film and a floating gate electrode material on a semiconductor substrate; forming a gate insulating film and a floating gate electrode by etching the first insulating film and the floating gate electrode material,...http://www.google.fr/patents/US20090305491?utm_source=gb-gplus-shareBrevet US20090305491 - NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD OF FABRICATING THE SAME
NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD OF FABRICATING THE SAME
Numéro de demande: 12/543,604 Numéro de publication: US 2009/0305491 A1 Date de dépôt: 19 août 2009 Brevet délivré: US7838404 ( Date de délivrance 23 nov. 2010)
