An MIS device (20) includes a semiconducting substrate (22), a silicon nitride buffer layer (24), a ferroelectric metal oxide superlattice material (26), and a noble metal top electrode (28). The layered superlattice material (26) is preferably a strontium bismuth tantalate, strontium bismuth niobate,...http://www.google.fr/patents/US6664115?utm_source=gb-gplus-shareBrevet US6664115 - Metal insulator structure with polarization-compatible buffer layer
Metal insulator structure with polarization-compatible buffer layer
