A gate electrode (2), a gate insulating film (3), and an active layer (4) made of a poly silicon film and having a source (5), a channel (7), and a drain (6) are formed on an insulating substrate (1) and an interlayer insulating film (9) is formed over the whole of the gate insulating film (3), the active...http://www.google.fr/patents/US6252248?utm_source=gb-gplus-shareBrevet US6252248 - Thin film transistor and display
