A memory array having memory cells comprising a diode and a phase change material is reliably programmed by maintaining all unselected memory cells in a reverse biased state. Thus leakage is low and assurance is high that no unselected memory cells are disturbed. In order to avoid disturbing unselected...http://www.google.fr/patents/US20060157679?utm_source=gb-gplus-shareBrevet US20060157679 - Structure and method for biasing phase change memory array for reliable writing
Structure and method for biasing phase change memory array for reliable writing
Numéro de demande: 11/040,262 Numéro de publication: US 2006/0157679 A1 Date de dépôt: 19 janv. 2005 Brevet délivré: US7307268 ( Date de délivrance 11 déc. 2007)
