Sidewalls of patterned resist are reformed using a reforming agent selected from the group consisting of (a) a carbon trichloride radical, (b) a mixture of silicon ion and oxygen ion, (c) a mixture of carbon ion and carbon monoxide ion, (d) a chlorine radical, (e) aluminum trichloride ...http://www.google.fr/patents/US5710066?utm_source=gb-gplus-shareBrevet US5710066 - Method of forming fine patterns
