The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relatively...http://www.google.fr/patents/US20050121676?utm_source=gb-gplus-shareBrevet US20050121676 - FinFET SRAM cell using low mobility plane for cell stability and method for forming
FinFET SRAM cell using low mobility plane for cell stability and method for ...
Numéro de demande: 10/987,532 Numéro de publication: US 2005/0121676 A1 Date de dépôt: 12 nov. 2004 Brevet délivré: US7087477 ( Date de délivrance 8 août 2006)
