The present invention provides a magnetoresistive memory cell (30), comprising a magnetoresistive memory element (31), a first current line (32) and a second current line (33), the first and the second current line (32, 33) crossing each other at a cross-point region but not being in direct contact....http://www.google.fr/patents/US7277317?utm_source=gb-gplus-shareBrevet US7277317 - MRAM architecture for low power consumption and high selectivity
MRAM architecture for low power consumption and high selectivity
