Grooves are formed in a single crystal silicon wafer in a pattern to encircle surface areas. Silicon dioxide is placed in the grooves and on the surface and then removed from certain of the areas. Layers of silicon are epitaxially grown only on these areas and their surfaces are oxidized. Polycrystalline...http://www.google.fr/patents/US4860081?utm_source=gb-gplus-shareBrevet US4860081 - Semiconductor integrated circuit structure with insulative partitions
Semiconductor integrated circuit structure with insulative partitions
