A semiconductor device comprises a lower electrode shaped as a convex formed on a semiconductor substrate having crystals, a grain boundary between adjacent crystals being perpendicular to a side of the lower electrode, a capacitor insulating film covering the lower electrode, and an upper electrode...http://www.google.fr/patents/US6867451?utm_source=gb-gplus-shareBrevet US6867451 - Semiconductor device and method for manufacturing the same
Semiconductor device and method for manufacturing the same
