A method for forming a square oxide structure or a square floating gate without a rounding effect at its corners. A first dielectric layer is formed on a pad layer for a square oxide structure or a polysilicon layer overlying a gate oxide layer for a floating gate, and a second dielectric layer is formed...http://www.google.fr/patents/US6245685?utm_source=gb-gplus-shareBrevet US6245685 - Method for forming a square oxide structure or a square floating gate structure without rounding effect
Method for forming a square oxide structure or a square floating gate ...
