A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers...http://www.google.fr/patents/US20020048869?utm_source=gb-gplus-shareBrevet US20020048869 - METHOD OF FORMING SEMICONDUCTOR THIN FILM AND PLASTIC SUBSTRATE
METHOD OF FORMING SEMICONDUCTOR THIN FILM AND PLASTIC SUBSTRATE
Numéro de demande: 09/116,119 Numéro de publication: US 2002/0048869 A1 Date de dépôt: 16 juil. 1998 Brevet délivré: US6376290 ( Date de délivrance 23 avr. 2002)
