Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in...http://www.google.fr/patents/US6368878?utm_source=gb-gplus-shareBrevet US6368878 - Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
Intentional asymmetry imposed during fabrication and/or access of magnetic ...
