Field effect transistors having a ferroelectric layer overlying a gate insulator layer as well as methods of their formation and use, and devices produced therefrom. Such ferroelectric field effect transistors are suitable for use in memory devices as the polarization of the ferroelectric layer can represent...http://www.google.fr/patents/US6787370?utm_source=gb-gplus-shareBrevet US6787370 - Method of forming a weak ferroelectric transistor
