High-performance bipolar transistors with improved wiring options and fabrication methods therefore are set forth. The bipolar transistor includes a base contact structure that has multiple contact pads which permit multiple device layouts when wiring to the transistor. For example, a first device layout...http://www.google.fr/patents/US5631495?utm_source=gb-gplus-shareBrevet US5631495 - High performance bipolar devices with plurality of base contact regions formed around the emitter layer
High performance bipolar devices with plurality of base contact regions ...
