A one-time programing memory element, capable of being manufactured in a 0.13 m or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current, and a switch having a voltage tolerance higher than that of the...http://www.google.fr/patents/US20020074616?utm_source=gb-gplus-shareBrevet US20020074616 - System and method for one-time programmed memory through direct-tunneling oxide breakdown
System and method for one-time programmed memory through direct-tunneling ...
Numéro de demande: 09/739,752 Numéro de publication: US 2002/0074616 A1 Date de dépôt: 20 déc. 2000 Brevet délivré: US6960819 ( Date de délivrance 1 nov. 2005)
