An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al-Cu and interlayer contact regions or studs of Al.sub.2 Cu between patterned interconnect layers. The invention overcomes the problem...http://www.google.fr/patents/US5565707?utm_source=gb-gplus-shareBrevet US5565707 - Interconnect structure using a Al.sub.2 Cu for an integrated circuit chip
Interconnect structure using a Al.sub.2 Cu for an integrated circuit chip
