A method of isolating semiconductor devices by wet etching of a semiconductor laminate structure formed on a substrate includes providing an etching stop layer having at least two layers between the substrate and the semiconductor laminate structure. The semiconductor laminate structure is etched to...http://www.google.fr/patents/US7049207?utm_source=gb-gplus-shareBrevet US7049207 - Isolating method and transferring method for semiconductor devices
Isolating method and transferring method for semiconductor devices
