There is provided fin structures and methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may include two fins separated by a channel, wherein the fins may be employed as fins of a field effect transistor. The fin structures are formed...http://www.google.fr/patents/US8076721?utm_source=gb-gplus-shareBrevet US8076721 - Fin structures and methods of fabricating fin structures
Fin structures and methods of fabricating fin structures
