The present invention relates to a method for fabricating a semiconductor device, and more particularly, to a method for fabricating a gate oxide film of a semiconductor device by which semiconductor devices having different electrical characteristics can be implemented in the same chip. The present...http://www.google.fr/patents/US6380102?utm_source=gb-gplus-shareBrevet US6380102 - Method for fabricating gate oxide film of semiconductor device
Method for fabricating gate oxide film of semiconductor device
