Semiconductor structure and method to simultaneously achieve optimal stress type and current flow for both nFET and pFET devices, and for gates orientated in one direction, are disclosed. One embodiment of the method includes bonding a first wafer having a first surface direction and a first surface...http://www.google.fr/patents/US20060060925?utm_source=gb-gplus-shareBrevet US20060060925 - SEMICONDUCTOR DEVICE STRUCTURE WITH ACTIVE REGIONS HAVING DIFFERENT SURFACE DIRECTIONS AND METHODS
SEMICONDUCTOR DEVICE STRUCTURE WITH ACTIVE REGIONS HAVING DIFFERENT SURFACE ...
Numéro de demande: 10/711,416 Numéro de publication: US 2006/0060925 A1 Date de dépôt: 17 sept. 2004 Brevet délivré: US7354806 ( Date de délivrance 8 avr. 2008)
