The nonvolatile semiconductor memory device includes a non-planar active region with floating gates disposed on opposite sides of the active region. A control gate overlaps the floating gates and a portion of the active region. ...http://www.google.fr/patents/US20050063215?utm_source=gb-gplus-shareBrevet US20050063215 - Nonvolatile semiconductor memory device having double floating gate structure and method of manufacturing the same
Nonvolatile semiconductor memory device having double floating gate ...
Numéro de demande: 10/913,489 Numéro de publication: US 2005/0063215 A1 Date de dépôt: 9 août 2004 Brevet délivré: US7288810 ( Date de délivrance 30 oct. 2007)
