To effectively lower the current required for changing a phase of a phase change layer in a phase change RAM device, metal pads are formed on a semiconductor substrate, and an oxide layer is formed on the metal pads. Nano-sized copolymer patterns aligned with the metal pads covered by the oxide layer...http://www.google.fr/patents/US20060281216?utm_source=gb-gplus-shareBrevet US20060281216 - Method of manufacturing a phase change RAM device utilizing reduced phase change current
Method of manufacturing a phase change RAM device utilizing reduced phase ...
Numéro de demande: 11/254,472 Numéro de publication: US 2006/0281216 A1 Date de dépôt: 20 oct. 2005 Brevet délivré: US7332370 ( Date de délivrance 19 févr. 2008)
