A method of forming a boron carbide layer for use as a barrier and an etch-stop layer in a copper dual damascene structure, and the structure itself are disclosed. In addition to providing a good barrier to copper diffusion, good insulating properties, high etch selectivity with respect to dielectric...http://www.google.fr/patents/US6352921?utm_source=gb-gplus-shareBrevet US6352921 - Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization
Use of boron carbide as an etch-stop and barrier layer for copper dual ...
