The invention relates to a field effect transistor comprising a nanowire forming a source region, a channel region and a drain region. A nanotube forming a gate region is arranged at a distance from the first nanotube or is fitted in such a way that essentially no tunnel flow between the nanotubes is...http://www.google.fr/patents/US20030148562?utm_source=gb-gplus-shareBrevet US20030148562 - Field effect transistor
Numéro de demande: 10/275,337 Numéro de publication: US 2003/0148562 A1 Date de dépôt: 18 déc. 2002 Brevet délivré: US6798000 ( Date de délivrance 28 sept. 2004)
