The present invention relates to an array of flash memory cells whose unit cell includes a single transistor of MONOS/SONOS structure (Metal/poly-Silicon Oxide Nitride Oxide Semiconductor) and to data programming and erasing using the same. The array of the flash memory cells includes a plurality of...http://www.google.fr/patents/US6831863?utm_source=gb-gplus-shareBrevet US6831863 - Array of flash memory cells and data program and erase methods of the same
Array of flash memory cells and data program and erase methods of the same
