Methods and apparatus for producing a semiconductor on glass (SOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to multiple ion implantation processes to create an exfoliation layer in the donor semiconductor wafer, wherein at least one of: (i) the type of ion,...http://www.google.fr/patents/US7456080?utm_source=gb-gplus-shareBrevet US7456080 - Semiconductor on glass insulator made using improved ion implantation process
Semiconductor on glass insulator made using improved ion implantation process
