A semiconductor substrate 4 consisting of an n.sup.+ -type substrate 1, an n.sup.- -type silicon carbide semiconductor layer 2 and a p-type silicon carbide semiconductor layer 3, made of hexagonal crystal-based single crystal silicon carbide with the main surface having a planar orientation approximately...http://www.google.fr/patents/US5744826?utm_source=gb-gplus-shareBrevet US5744826 - Silicon carbide semiconductor device and process for its production
Silicon carbide semiconductor device and process for its production
