A method for making a flexible metal silicide local interconnect structure. The method includes forming an amorphous or polycrystalline silicon layer on a substrate including at least one gate structure, forming a layer of silicon nitride over the silicon layer, removing a portion of the silicon nitride...http://www.google.fr/patents/US6693025?utm_source=gb-gplus-shareBrevet US6693025 - Local interconnect structures for integrated circuits and methods for making the same
Local interconnect structures for integrated circuits and methods for making ...
