This invention is directed to a method for plasma etching difficult to etch materials at a high etch rate. The method is particularly useful in plasma etching silicon nitride layers more than five microns thick. The method includes a plasma formed by energy provided from two separate power sources and...http://www.google.fr/patents/US20010019897?utm_source=gb-gplus-shareBrevet US20010019897 - High etch rate method for plasma etching silicon nitride
High etch rate method for plasma etching silicon nitride
Numéro de demande: 09/853,847 Numéro de publication: US 2001/0019897 A1 Date de dépôt: 11 mai 2001 Brevet délivré: US6471833 ( Date de délivrance 29 oct. 2002)
