In a process of fabricating a semiconductor device, an amorphous semiconductor layer is formed on a substrate, densified by heat-treatment, and is subjected to further heat-treatment to be changed into a polycrystalline semiconductor layer. A MOS transistor can be formed using the polycrystalline semiconductor...http://www.google.fr/patents/US4814292?utm_source=gb-gplus-shareBrevet US4814292 - Process of fabricating a semiconductor device involving densification and recrystallization of amorphous silicon
Process of fabricating a semiconductor device involving densification and ...
