A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous...http://www.google.fr/patents/US7056382?utm_source=gb-gplus-shareBrevet US7056382 - Excimer laser crystallization of amorphous silicon film
Excimer laser crystallization of amorphous silicon film
