A system and method are disclosed for providing a self aligned bipolar transistor using a sacrificial polysilicon external base. An active region of a transistor is formed and a sacrificial polysilicon external base is formed above the active region of the transistor and covered with a silicon oxide...http://www.google.fr/patents/US7642168?utm_source=gb-gplus-shareBrevet US7642168 - System and method for providing a self aligned bipolar transistor using a sacrificial polysilicon external base
System and method for providing a self aligned bipolar transistor using a ...
