A method of producing a top gate thin-film transistor comprises the steps of forming doped silicon source and drain regions (6a,8a) on an insulating substrate (2) and subjecting the face of the substrate (2) on which the source and drain regions (6a,8a) are formed to plasma treatment to form a doped...http://www.google.fr/patents/US6677191?utm_source=gb-gplus-shareBrevet US6677191 - Method of producing a top-gate thin film transistor
Method of producing a top-gate thin film transistor
