A semiconductor defect inspection device and method for detecting defects of partially finished substrates (semiconductor wafers) for semiconductor devices is provided. The substrate surface is irradiated with a charged particle beam and a voltage contrast image is obtained while the charged voltage...http://www.google.fr/patents/US20030057971?utm_source=gb-gplus-shareBrevet US20030057971 - Inspection method using a charged particle beam and inspection device based thereon
Inspection method using a charged particle beam and inspection device based ...
Numéro de demande: 10/208,818 Numéro de publication: US 2003/0057971 A1 Date de dépôt: 1 août 2002 Brevet délivré: US6853204 ( Date de délivrance 8 févr. 2005)
