A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges...http://www.google.fr/patents/US7615786?utm_source=gb-gplus-shareBrevet US7615786 - Thin film transistor incorporating an integrated capacitor and pixel region
Thin film transistor incorporating an integrated capacitor and pixel region
