An improved semiconductor device such as an improved graded band gap transistor and an improved graded band gap diode, characterized by comprising a non-single-crystal material containing silicon atom, a band gap adjusting atom and a localized level reducing atom and having a region in which a band gap...http://www.google.fr/patents/US5093704?utm_source=gb-gplus-shareBrevet US5093704 - Semiconductor device having a semiconductor region in which a band gap being continuously graded
Semiconductor device having a semiconductor region in which a band gap being ...
