A process for producing a polysilicon thin film transistor includes hydrogenating the thin film transistor and depositing an atomic hydrogen-containing layer on the thin film transistor. The thin film transistor is characterized by leakage current rates as low as 10.sup.-13 A....http://www.google.fr/patents/US5534445?utm_source=gb-gplus-shareBrevet US5534445 - Method of fabricating a polysilicon thin film transistor
Method of fabricating a polysilicon thin film transistor
